Anticipating Atomic Layer Innovation in South Korea
As the semiconductor industry surges toward ever-more complex device architectures, ALD 2025 stands out as a premier venue for discovering the innovations that will define next-generation atomic-scale processing. From addressing high aspect ratio (HAR) challenges to developing new materials and precision etching techniques, the conference program is packed with breakthrough research. At Chipmetrics, we’re especially excited to see how our customers and collaborators are tackling the very problems our metrology tools are designed to solve – often using our PillarHall™ test structures to do so.
Here are our top picks for presentations to watch at ALD 2025. Each touches on critical ALD challenges – like conformality, material behavior in 3D topographies, and process stability – that Chipmetrics products help elucidate.
1. Bottleneck-Effect on Thin-Film Conformality in High Aspect Ratio
AF-MoP-28 | Utriainen et al., Chipmetrics & Aalto University
Monday, June 23: 17:45–19:00 – ALD Fundamentals Poster Session |Event Hall
This study investigates the often-overlooked “bottleneck effect” in high-aspect-ratio ALD, which significantly limits thin-film conformality. Using Chipmetrics’ LHAR test structures, the team explores how geometry affects film growth in real-world trenches and channels – essential knowledge for reliable 3D integration.
2. Early Detection of Process Window Shifts in ALD Processes by PillarHall™ Lateral High Aspect Ratio Test Structures
AM-MoP-13 | Karttunen et al., Chipmetrics & Aalto University
Monday, June 23: 17:45–19:00 – ALD Fundamentals Poster Session | Event Hall
Maintaining ALD process stability is critical in high-volume manufacturing. This presentation showcases how Chipmetrics’ LHAR structures enable the early detection of process window shifts – essentially functioning as a metrology “canary in the coal mine” for ALD tools and recipes.
3. Plasma-Enhanced Spatial ALD Meets Complex Topologies
AF1-MoA-13 | van de Poll et al., Eindhoven University of Technology
Monday, June 23: 16:30 – ALD Fundamentals | Halla Hall
A standout collaboration featuring Chipmetrics’ test chips, this work dives deep into the interplay between growth dynamics, crystallinity, and conformality in TiO₂ films deposited via PE-s-ALD. Using in-situ ellipsometry and XPS in LHAR structures, the team reveals how the material’s phase changes across different trench depths—critical for precision engineering of functional oxide layers.
4. Oxide Film ALD Using OH Radicals Generated by Mixing Pure Ozone Gas with Hydrogen-Included Molecular Gas Over 200 °C
AF-MoP-7 | Dr. Naoto Kameda, MEIDENSHA Group
Monday, June 23: 17:45–19:00 – ALD Fundamentals Poster Session | Event Hall
This presentation introduces a novel oxidant approach for oxide film ALD, where OH radicals are generated by combining pure ozone with hydrogen-containing gases at deposition temperatures above 200 °C. The method aims to bridge the reactivity gap between ozone and traditional water-based processes, enabling improved film growth on high aspect ratio (HAR) surfaces. By enhancing oxidation potential while maintaining compatibility with complex 3D structures, this technique shows promise for depositing conformal and high-quality oxide films in next-generation device geometries.
5. Demonstration of ALD HfZr₁₋ₓO₂ Using Various Oxidant Sources Over Ultra-High Aspect Ratio Structure for Memory Applications
AF-MoP-027 | Mr. Lorenzo Diaz, RASIRC
Monday, June 23: 17:45–19:00 – ALD Fundamentals Poster Session | Event Hall
This study explores the deposition of ferroelectric HfZr₁₋ₓO₂ thin films within ultra-high aspect ratio (UHAR) features, targeting advanced memory applications. Multiple oxidant sources, including ozone, water, and ozone-water hybrids, are evaluated for their ability to ensure conformal growth while preserving material quality and ferroelectric behavior. The work highlights how oxidant selection impacts coverage depth and interface properties, offering key insights into process optimization for demanding 3D memory structures like FeFETs and DRAM capacitors.
6. Evaluation of a Hafnium Precursor with Higher Thermal Stability for the Atomic Layer Deposition of Hafnium Oxide Films
AF-MoP-040 | Joo-Yong Kim, Merck KGaA Darmstadt
Monday, June 23: 17:45–19:00 – ALD Fundamentals Poster Session | Event Hall
This presentation evaluates a newly developed hafnium precursor exhibiting enhanced thermal stability, intended for ALD of HfO₂ in high-temperature and HAR process conditions. The precursor’s performance is benchmarked in terms of growth rate, film uniformity, and impurity levels. Early results show that the improved thermal window enables more robust process integration and superior film quality, particularly in applications demanding deep feature penetration and high-k dielectric performance.
Why These Presentations Matter
Across these sessions, one theme is clear: as devices become more complex, understanding how materials behave within HAR and 3D topologies is critical. Whether it’s deposition, etching, or material characterization, the industry is pushing for accuracy, control, and reliability. Tools like Chipmetrics’ PillarHall™ structures are becoming essential to validate these complex processes – and several of these studies already use them.
Don’t miss these sessions at ALD/ALE 2025 – and make sure to visit Chipmetrics in booth #16.
