Accelerating the applications of Atomic Layer Deposition (ALD)
PillarHall LHAR4
PillarHall LHAR4 silicon test chip contains Lateral High Aspect Ratio test structures for ALD and CVD thin film characterization. It is used as a measurement tool for thin film conformality and thin film side wall properties in a deep trench.
Benefits
Accurate, fast and easy measurements
No cross-sectioning, no destructive sampling
Ultra high aspect ratios (>1000)
Simple measurements by existing lab tools
Wide compatibility to various conditions (temperature, pressure)
Cost efficient measurement tool
PillarHall’s innovative approach reduces measurement costs by eliminating the need for destructive sample preparation, special analytical tools, specialist users, and special expensive services.
Characterize Understand Ensure quality Without cross-sectioning
Fast and easy measurement tool
Conformality is challenging to measure and quantify since standardized measurement methods do not exist. Traditional vertical test structures typically rely on tedious and time-consuming cross-sectional SEM/TEM analyses. The lateral 3D approach of PillarHallĀ® enables fast, easy, and accurate measurement without cross-sectioning and destructive sampling.
Analysis process
1. Deposit the thin film
2. Remove the top membrane
3. Measure
4. Analyze
Applications
Conformality in ALD/CVD
Properties of the film on the side wall
Plasma-enhanced ALD/CVD development
Kinetic modeling of ALD/ALE
Quality control and assurance
Comparison between processes
Wafer level conformality measurements
PillarHall special models
Chipmetrics provides Pillarhall special models with variables such as gap height, layout design, chip size, and electrical conductivity. Ā We have various versions from earlier Research and development batches. Please contact us for more information.